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| VCUT0714A-HD1 Vishay Semiconductors Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection Diode in LLP1006-2L Features * * * * * * * Ultra compact LLP1006-2L package Low package height < 0.4 mm 1-line ESD-protection e4 Working range - 7 V up to + 14 V or - 14 V up to + 7 V Low leakage current < 0.1 A Low load capacitance CD = 8.0 pF ESD-protection acc. IEC 61000-4-2 25 kV contact discharge 30 kV air discharge Soldering can be checked by standard vision inspection. No X-ray necessary Lead (Pb)-free component Pin plating NiPdAu (e4) no whisker growth "Green" molding compound Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 2 20950 20855 * * * * * Marking WB 20929 Dot = Cathode marking W = Date code B = Type code Ordering Information Device name VCUT0714A-HD1 Ordering code VCUT0714A-HD1-GS08 Taped units per reel (8 mm tape on 7" reel) 8000 Minimum order quantity 8000 Package Data Device name VCUT0714A-HD1 Package name LLP1006-2L Marking code B Weight 0.72 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level MSL Level 1 (according J-STD-020) Soldering conditions 260 C/10 s at terminals Absolute Maximum Ratings Parameter Peak pulse current Test Conditions Pin 1 to pin 2 acc. IEC 61000-4-5, 8/20 s/single shot Pin 2 to pin 1 acc. IEC 61000-4-5, 8/20 s/single shot Pin 1 to pin 2 acc. IEC 61000-4-5, 8/20 s/single shot Pin 2 to pin 1 acc. IEC 61000-4-5, 8/20 s/single shot Contact discharge acc. IEC61000-4-2; 10 pulses Air discharge acc. IEC61000-4-2; 10 pulses Junction temperature Symbol IPPM IPPM PPP PPP VESD Tj TSTG Value 5 2 63 54 25 30 - 40 to + 125 - 55 to + 150 Unit A A W W kV C C Peak pulse power ESD immunity Operating temperature Storage temperature Document Number 81801 Rev. 1.0, 22-Nov-07 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VCUT0714A-HD1 Vishay Semiconductors Cut the spikes with VCUT0714A-HD1: The VCUT0714A-HD1 is a Bidirectional but Asymmetrical (BiAs) ESD-protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0714A-HD1 offers a high isolation (low leakage current, small capacitance) within the specified working range of - 7 V to + 14 V or - 14 V and + 7 V. Due to the short leads and small package size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. Electrical Characteristics Tamb = 25 C, unless otherwise specified VCUT0714A-HD1 (Measured from pin 1 to pin 2) Parameter Protection paths Working voltage Leakage current Clamping voltage at IPP12 = IPPM = 5 A Break down voltage Capacitance at V12 = 3.5 V; f = 1 MHz CD 6.4 pF at I12 = 1 mA at V12 = 0 V; f = 1 MHz VC12 VR CD 7.3 8 8.5 17 V V pF Test conditions number of lines which can be protected at I12 = 0.1 A at V12 = 7 V at IPP12 = 1 A Symbol Nlines VRWM IR VC12 7 0.1 13 Min. Typ. Max. 1 Unit lines V A V VCUT0714A-HD1 (Measured from pin 2 to pin 1) Parameter Protection paths Working voltage Leakage current Clamping voltage at IPP21 = IPPM = 2 A Break down voltage Capacitance at V21 = 7 V; f = 1 MHz CD 4 pF at I21 = 1 mA at V21 = 0 V; f = 1 MHz VC21 VR CD 14.5 8 8.5 30 V V pF Test conditions number of lines which can be protected at I21 = 0.1 A at V21 = 14 V at IPP21 = 1 A Symbol Nlines VRWM IR VC21 14 0.1 27 Min. Typ. Max. 1 Unit lines V A V www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 81801 Rev. 1.0, 22-Nov-07 VCUT0714A-HD1 Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 25 100 % 80 % VR (V) 60 % 20 s to 50 % 40 % 20 % 0% 0 20548 8 s to 100 % 20 Pin 2 to 1 15 IPPM 10 Pin 1 to 2 5 10 20 30 40 20577 0 0.01 0.1 1 Time (s) 10 IR (A) 100 1000 10000 Figure 1. 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-5 Figure 4. Typical Reverse Voltage VR vs. Reverse Current IR 120 % rise time = 0.7 ns to 1 ns 100 % 80 % 60 % 53 % 35 30 25 VC Pin 2 to 1 Discharge Current IESD VC (V) 20 15 Pin 1 to 2 10 5 0 0 1 2 3 4 5 6 7 Measured acc. IEC 61000-4-5 (8/20 s - wave form) 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 Time (ns) 20578 IPP (A) Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Figure 5. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 9 8 7 6 f = 1 MHz Pin 1 to 2 80 70 60 acc. IEC 61000-4-2 + 8 kV contact discharge CD (pF) 5 Pin 2 to 1 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VC-ESD (V) 50 40 30 20 10 0 - 10 - 10 0 10 20 30 40 50 60 70 80 90 Pin 1 to 2 20576 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR 20579 t (ns) Figure 6. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) Document Number 81801 Rev. 1.0, 22-Nov-07 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VCUT0714A-HD1 Vishay Semiconductors 10 0 - 10 - 20 acc. IEC 61000-4-2 - 8 kV contact discharge 180 160 140 120 acc. IEC 61000-4-2 contact discharge Pin 2 to 1 VC-ESD (V) - 30 - 40 - 50 - 60 - 70 - 80 - 10 0 10 20 30 40 50 60 70 80 90 Pin 1 to 2 VC-ESD (V) 100 80 60 40 20 0 0 5 10 15 20 VC-ESD Pin 1 to 2 25 30 20580 t (ns) 20575 VESD (kV) Figure 7. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) Figure 8. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Package Dimensions in millimeters (inches): LLP1006-2L 0.25 [0.010] 0.3 [0.012] 0.2 [0.008] 0.15 [0.006] 0.55 [0.022] 0.45 [0.018] 0.45 [0.018] 0.35 [0.014] 0.65 [0.026] 0.55 [0.022] 0.33 [0.013] 0.05 [0.002] 0.4 [0.016] 0 [0.000] Orientation Identification 1.05 [0.041] 0.95 [0.037] foot print recommendation: 0.5 [0.020] 1 [0.039] 0.2 [0.008] solder resist mask 0.6 [0.024] solder pad 0.05 [0.002] 0.25 [0.010] soldermask opening 0.03 measured middle of the package 0.5 [0.020] Document no.: S8-V-3906.04-005 (4) Rev. 2 - Date: 22.October.2007 20812 www.vishay.com 4 0.125 [0.005] Ref. For technical support, please contact: ESD-Protection@vishay.com Document Number 81801 Rev. 1.0, 22-Nov-07 VCUT0714A-HD1 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81801 Rev. 1.0, 22-Nov-07 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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